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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1895 DESCRIPTION *With TO-3 package *High breakdown voltage *Low collector saturation voltage APPLICATIONS *For color TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 6 50 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1895 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 600 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=5A; IB=1A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V A A ICBO Collector cut-off current VCB=750V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=2A ; VCE=10V 8 30 fT Transition frequency IC=0.1A ; VCE=10V 2 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1895 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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